|| The Laboratory for Advanced Semiconductor Epitaxy is located in the Microelectronics Research Center at the University of Texas at Austin. We are developing advanced materials and devices for electronics and optoelectronics. We are particularly interested in GaSb-based mid-infrared quantum well lasers, THz sources based on epitaxial metal/semiconductor nanocomposites, new plasmonic materials, low-noise III-V avalanche photodiodes, silicon-based lasers for optical interconnects, and silicon-based III-V TFETs (jointly with Prof. Lee). Our secret weapon in this effort is the molecular beam epitaxy (MBE) crystal growth technique.
S.J. Maddox, S.D. March, and S.R. Bank, "Broadly Tunable AlInAsSb Digital Alloys Grown on GaSb," submitted, Nov. 2015.
H.R. Seren, J. Zhang, G.R. Keiser, S.J. Maddox, X. Zhao, K. Fan, S.R. Bank, X. Zhang, and R.D. Averitt, "Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials," submitted, Nov. 2015.
D.J. Ironside, A.M. Crook, A.M. Skipper, and S.R. Bank, "Optimal Integration of Rare-Earth Monopnictide Nanostructures in III-V for High Optical Quality Applications," submitted to 58th Electronic Materials Conf. (EMC), Newark, DE, June 2016.
(Invited) S.R. Bank, S.J. Maddox, S.D. March, W. Sun, M. Ren, and J.C. Campbell, "Advances in IR APD materials research," SPIE Defense and Commercial Sensing, Baltimore, MD, Apr. 2016.
(Invited) J.C. Campbell, and S.R. Bank, "Recent progress in avalanche photodiodes for sensing in the IR spectrum," SPIE Defense and Commercial Sensing, Baltimore, MD, Apr. 2016.
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Seth R. Bank
Temple Foundation Fellow. No. 5
2.606C MER (main office)
312 ENS (teaching office)
10100 Burnet Road, Bldg. #160
MER 2.606C, R9900
Austin, TX 78758