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The Laboratory for Advanced Semiconductor Epitaxy is located in the Microelectronics Research Center at the University of Texas at Austin. We are developing advanced materials and devices for electronics and optoelectronics. We are particularly interested in GaSb-based mid-infrared quantum well lasers, THz sources based on epitaxial metal/semiconductor nanocomposites, new plasmonic materials, low-noise III-V avalanche photodiodes, silicon-based lasers for optical interconnects, and silicon-based III-V TFETs. Our secret weapon in this effort is the molecular beam epitaxy (MBE) crystal growth technique. |
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Recent Publications
A. Jones, Y. Shen, K. Sun, D. Chen, S. March, S. Bank, and J. Campbell, "Room-temperature bandwidth of 2-µm AlInAsSb avalanche photodiodes," Optics Express, vol. 29, no. 23, pp. 38939–38945, Nov. 2021.
R. Wang, D. Chen, J.A. McArthur, X. Xue, A. Jones, S.R. Bank, and J.C. Campbell, "Al0.3InAsSb/Al0.7InAsSb Digital Alloy nBn Photodetectors," Journal of Lightwave Technology, pp. 1–1, Oct. 2021.
A.A. Dadey, S.D. March, X. Xue, S.R. Bank, and J.C. Campbell, "Cryogenic Noise of Staircase Avalanche Photodiodes," 2021 IEEE Photonics Conference (IPC), Vancouver, BC, Canada, Oct. 2021.
J. Kopaczek, F. Dybala, S.J. Zelewski, N. Sokolowski, W. Zuraw, K.M. McNicholas, R.H. El-Jaroudi, R.C. White, S.R. Bank, and R. Kudrawiec, "Photoreflectance studies of temperature and hydrostatic pressure dependencies of direct optical transitions in BGaAs alloys grown on GaP," Journal of Physics D: Applied Physics, vol. 55, no. 1, pp. 015107, Oct. 2021.
K.M. McNicholas, R.H. El-Jaroudi, and S.R. Bank, "Kinetically Limited Molecular Beam Epitaxy of BxGa1-xAs Alloys," Journal of Crystal Growth & Design, Sept. 2021.
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Seth R. Bank
Cullen Trust Endowed Prof. No. 6
Email:
CV: SRB_CV.pdf
Offices:
2.206P MER (main office)
3.876 EER (teaching office)
Mailing address:
10100 Burnet Road, Bldg. #160
MER 2.606C, R9900
Austin, TX 78758
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