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The Laboratory for Advanced Semiconductor Epitaxy is located in the Microelectronics Research Center at the University of Texas at Austin. We are developing advanced materials and devices for electronics and optoelectronics. We are particularly interested in GaSb-based mid-infrared quantum well lasers, THz sources based on epitaxial metal/semiconductor nanocomposites, new plasmonic materials, low-noise III-V avalanche photodiodes, silicon-based electronics/optoelectronics, and sources/detectors for quantum information processing. Our secret weapon in this effort is the molecular beam epitaxy (MBE) crystal growth technique. |
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Recent Publications
R.C. White, M.K. Bergthold, A.J. Muhowski, L.J. Nordin, A.F. Ricks, D. Wasserman, and S.R. Bank, "Growth of InAsSbBi on InSb Towards Lattice-Matched Longwave-Infrared Optoelectronics," 64th Electronic Materials Conf. (EMC), Columbus, OH, June 2022.
A.M. Skipper, A.H. Jones, M.K. Bergthold, A.J. Muhowski, A.M. Garcia, D.J. Ironside, D. Wasserman, J.C. Campbell, and S.R. Bank, "Selective Area Epitaxy by MBE for Self-Aligned III-V Devices," 64th Electronic Materials Conf. (EMC), Columbus, OH, June 2022.
J.A. McArthur, A.A. Dadey, S.D. March, A.H. Jones, X. Xue, J.C. Campbell, and S.R. Bank, "The Cascaded Multiplier Avalanche Photodiode," 80th Device Research Conf. (DRC), Columbus, OH, June 2022.
N.D. Foster, A.K. Rockwell, B.S. Mendoza, S.R. Bank, and M.C. Downer, "A Study of Second-Order Susceptibility in Digital Alloy-Grown InAs/AlSb Multiple Quantum Wells," Advanced Optical Materials, May 2022.
R.H. El-Jaroudi, K.M. McNicholas, H.S. Maczko, R. Kudrawiec, and S.R. Bank, "Growth advancement of GaAs-based BGaInAs alloys emitting at 1.3 µm by molecular beam epitaxy ," Journal of Crystal Growth & Design, May 2022.
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Seth R. Bank
Cullen Trust Endowed Prof. No. 6
Email:
CV: SRB_CV.pdf
Offices:
2.206P MER (main office)
3.876 EER (teaching office)
Mailing address:
10100 Burnet Road, Bldg. #160
MER 2.606C, R9900
Austin, TX 78758
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