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The Laboratory for Advanced Semiconductor Epitaxy is located in the Microelectronics Research Center at the University of Texas at Austin. We are developing advanced materials and devices for electronics and optoelectronics. We are particularly interested in GaSb-based mid-infrared quantum well lasers, THz sources based on epitaxial metal/semiconductor nanocomposites, new plasmonic materials, low-noise III-V avalanche photodiodes, silicon-based lasers for optical interconnects, and silicon-based III-V TFETs. Our secret weapon in this effort is the molecular beam epitaxy (MBE) crystal growth technique. |
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Recent Publications
D. Wei, S. Maddox, P. Sohr, S. Bank, and S. Law, "Enlarged growth window for plasmonic silicon-doped InAs using a bismuth surfactant," Optical Materials Express, vol. 10, no. 2, pp. 302–311, Feb. 2020.
A.F. Briggs, L.J. Nordin, A.J. Muhowski, P. Petluru, D. Silva, D. Wasserman, and S.R. Bank, "Mid-infrared electroluminescence from type-II In(Ga)Sb quantum dots," Applied Physics Letters, vol. 116, pp. 061103, Feb. 2020.
L. Nordin, K. Li, A. Briggs, E. Simmons, S.R. Bank, V.A. Podolskiy, and D. Wasserman, "Enhanced emission from ultra-thin long wavelength infrared superlattices on epitaxial plasmonic materials," Applied Physics Letters, vol. 116, pp. 021102, Jan. 2020.
R. Kudrawiec, M. Polak, K.M. McNicholas, J. Kopaczek, M.A. Wistey, and S.R. Bank, "Bowing of the band gap and spin-orbit splitting energy in BGaAs," Materials Research Express, vol. 6, no. 12, pp. 125913, Jan. 2020.
A.H. Jones, A. Rockwell, S.D. March, Y. Yuan, S.R. Bank, and J.C. Campbell, "High Gain, Low Dark Current Al0.8In0.2As0.23Sb0.77 Avalanche Photodiodes," IEEE Photonics Technology Letters, vol. 31, no. 24, pp. 1948–1951, Dec. 2019.
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Seth R. Bank
Cullen Trust Endowed Prof. No. 6
Full Professor
Email:
CV: SRB_CV.pdf
Offices:
2.606C MER (main office)
3.876 EER (teaching office)
Mailing address:
10100 Burnet Road, Bldg. #160
MER 2.606C, R9900
Austin, TX 78758
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