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The Laboratory for Advanced Semiconductor Epitaxy is located in the Microelectronics Research Center at the University of Texas at Austin. We are developing advanced materials and devices for electronics and optoelectronics. We are particularly interested in GaSb-based mid-infrared quantum well lasers, THz sources based on epitaxial metal/semiconductor nanocomposites, new plasmonic materials, low-noise III-V avalanche photodiodes, silicon-based lasers for optical interconnects, and silicon-based III-V TFETs. Our secret weapon in this effort is the molecular beam epitaxy (MBE) crystal growth technique. |
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Recent Publications
N. Foster, .A.K. Rockwell, J. McArthur, B.M. Santoyo, S. Bank, and M. Downer, "Measurement of chi(2) of III-V quantum well structures," Bulletin of the American Physical Society, Mar. 2021.
I.A. Gulyas, C.A. Stephenson, Q. Meng, S.R. Bank, and M.A. Wistey, "The Carbon State in Dilute Germanium Carbides," Journal of Applied Physics, vol. 129, no. 5, pp. 055701, Feb. 2021.
A.J. Muhowski, A.M. Skipper, S.D. March, M.J. Rodwell, and S.R. Bank, "A true hero of the trade: On the critical contributions of Art Gossard to modern device technology," Journal of Vacuum Science & Technology A, vol. 39, no. 2, pp. 020804, Feb. 2021.
K. Li, E. Simmons, A.F. Briggs, S.R. Bank, D. Wasserman, V.A. Podolskiy, and E.E. Narimanov, "Ballistic Metamaterials," Optica, vol. 7, no. 12, pp. 1773–1780, Dec. 2020.
J. Zheng, S.Z. Ahmed, Y. Yuan, A.H. Jones, Y. Tan, A.K. Rockwell, S.D. March, S.R. Bank, A.W. Ghosh, and J.C. Campbell, "Full band Monte Carlo simulation of AlInAsSb digital alloys," InfoMat, vol. 2, no. 6, pp. 1236–1240, Nov. 2020.
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Seth R. Bank
Cullen Trust Endowed Prof. No. 6
Full Professor
Email:
CV: SRB_CV.pdf
Offices:
2.606C MER (main office)
3.876 EER (teaching office)
Mailing address:
10100 Burnet Road, Bldg. #160
MER 2.606C, R9900
Austin, TX 78758
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