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The Laboratory for Advanced Semiconductor Epitaxy is located in the Microelectronics Research Center at the University of Texas at Austin. We are developing advanced materials and devices for electronics and optoelectronics. We are particularly interested in GaSb-based mid-infrared quantum well lasers, THz sources based on epitaxial metal/semiconductor nanocomposites, new plasmonic materials, low-noise III-V avalanche photodiodes, silicon-based lasers for optical interconnects, and silicon-based III-V TFETs. Our secret weapon in this effort is the molecular beam epitaxy (MBE) crystal growth technique. |
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Recent Publications
R.H. El-Jaroudi, A.H. Jones, A.A. Dadey, B. Guo, X. Xue, J.C. Campbell, and S.R. Bank, "Growth of B-III-V alloys for GaAs-based optoelectronic devices," 63rd Electronic Materials Conf. (EMC), Virtual, June 2021.
R.H. El-Jaroudi, A.A. Dadey, X. Xue, A.H. Jones, B. Guo, J.C. Campbell, and S.R. Bank, "Reducing III-V avalanche photodiode noise through the introduction of boron," 79th Device Research Conf. (DRC), Virtual, June 2021.
A.M. Garcia, A.M. Skipper, D.J. Ironside, and S.R. Bank, "Experimentally-Calibrated Modeling of Molecular Beam Epitaxy Selective Area Regrowth," 63rd Electronic Materials Conf. (EMC), Virtual, June 2021.
A.F. Briggs, L. Nordin, A.J. Muhowski, E. Simmons, P. Dhingra, M.L. Lee, V.A. Podolskiy, D.M. Wasserman, and S.R. Bank, "Enhanced double heterostructure infrared LEDs using monolithically integrated plasmonic materials," 63rd Electronic Materials Conf. (EMC), Virtual, June 2021.
A.M. Skipper, A.M. Garcia, D.J. Ironside, D.M. Wasserman, and S.R. Bank, "Selective Area Doping and Lateral Overgrowth by Solid-Source Molecular Beam Epitaxy," 63rd Electronic Materials Conf. (EMC), Virtual, June 2021.
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Seth R. Bank
Cullen Trust Endowed Prof. No. 6
Full Professor
Email:
CV: SRB_CV.pdf
Offices:
2.606C MER (main office)
3.876 EER (teaching office)
Mailing address:
10100 Burnet Road, Bldg. #160
MER 2.606C, R9900
Austin, TX 78758
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